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Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowires
Bibliographic Information
- Other Title
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- Exciton and biexciton emissions from single GaAs quantum dots in Al Ga As nanowires
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
- Published
- 2007-04
- DOI
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- 10.1143/jjap.46.2578
- Publisher
- Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Journal
-
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
-
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (4B), 2578-2580, 2007-04
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Details 詳細情報について
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- CRID
- 1520853833087920128
-
- NII Article ID
- 40015349102
-
- NII Book ID
- AA10457675
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 8720486
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- Text Lang
- en
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- NDL Source Classification
-
- ZM35(科学技術--物理学)
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- Data Source
-
- NDL Search
- Crossref
- CiNii Articles
