Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Chih Ren Hsieh and Chiung Hui Lai and Bo Chun Lin,Improved retention characteristic in polycrystalline silicon-oxide-hafnium oxide-oxide-silicon-type nonvolatile memory with robust tunnel oxynitride,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-03,50,3,,https://cir.nii.ac.jp/crid/1520853833131072768,