著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Doo-Hyun Kim and Seongjae Cho and Dong Hua Li,Program/erase model of nitride-based NAND-type charge trap flash memories,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2010-08,49,8,084301,https://cir.nii.ac.jp/crid/1520853833339030144,https://doi.org/10.1143/jjap.49.084301