著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Chorng-Jye Sheu,Compact hot-electron induced oxide trapping charge and post-stress drain current modeling for buried-channel p-type metal-oxide-semiconductor field-effect-transistors,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2008-08,47,8,6200-6204,https://cir.nii.ac.jp/crid/1520853833834273920,