Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Jingze Tian and Biao Zuo and Wei Lu,Stress modulation of silicon nitride film by initial deposition conditions for transistor carrier enhancement,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2010-05,49,5,,https://cir.nii.ac.jp/crid/1520853833980850048,