著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Guoqiang Li and Jitsuo Ohta and Koichiro Okamoto,Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition,"Japanese journal of applied physics. Part 2, Letters & express letters",00214922,Tokyo : Japan Society of Applied Physics,2006-05,45,17-19,L457-459,https://cir.nii.ac.jp/crid/1520854805352652160,