著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Norio Tsuyukuchi and Kentaro Nagamatsu and Yoshikazu Hirose,Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact,"Japanese journal of applied physics. Part 2, Letters & express letters",00214922,Tokyo : Japan Society of Applied Physics,2006,45,8-11,L319-321,https://cir.nii.ac.jp/crid/1520854805556327168,