Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Takeshi Yoshimura and Ryota Arai and Keiichiro Masuko,Novel Ferroelectric Gate Thin-Film Transistors Using a Polar Semiconductor Channel,"Japanese journal of applied physics. Part 2, Letters & express letters",00214922,Tokyo : Japan Society of Applied Physics,2006-12,45,46-50,L1266-1269,https://cir.nii.ac.jp/crid/1520854805887405952,