著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Chen Wang and Cheng Li and Shihao Huang,Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Implantation and Excimer Laser Annealing,Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2013-10,6,10,,https://cir.nii.ac.jp/crid/1521136280996372608,