著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Yueh-Chin Lin and Chih-Hsiang Chang and Fang-Ming Li,Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application,Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2013-09,6,9,091003,https://cir.nii.ac.jp/crid/1521699230401451136,https://doi.org/10.7567/apex.6.091003