著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Bijesh Rajamohanan and Dheeraj Mohata and Dmitry Zhernokletov,Low-Temperature Atomic-Layer-Deposited High-κ Dielectric for p-Channel In₀.₇Ga₀.₃As/GaAs₀.₃₅Sb₀.₆₅ Heterojunction Tunneling Field-Effect Transistor,Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2013-10,6,10,,https://cir.nii.ac.jp/crid/1521980705926287104,