著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Armin Dadgar and Jurgen Biasing and Annette Diez,"Crack-free, highly conducting GaN layers on Si substrates by Ge doping",Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2011-01,4,1,011001,https://cir.nii.ac.jp/crid/1522262180124625536,https://doi.org/10.1143/apex.4.011001