著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Masayoshi Adachi and Kenji Tsuda and Masashi Sugiyama,High-Quality AlN Layer Homoepitaxially Grown on Nitrided a-Plane Sapphire Using a Ga-Al Flux,Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2013-09,6,9,,https://cir.nii.ac.jp/crid/1523388079980196096,