Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
SHANWARE A.,Reliability evaluation of HfSiON gate dielectric film with 12.8 A SiO2 equivalent thickness,"Proceedings of IEDM Tech. Digest, 2001",,,2001,,,,https://cir.nii.ac.jp/crid/1570291226803963904,