<調査報告>学生実習向けに簡単化された半導体デバイス製作プロセス

書誌事項

タイトル別名
  • <Report>A Simplified Fabrication Process of Semiconductor Devices for Education

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説明

A simplified fabrication process of p-MOSFET was developed for classroom use by undergraduate students. The process contains almost all elemental manufacturing procedures of an integrated circuit (IC), but only four days are required to complete the course. Since annealing and boiling with acid are omitted and a diffusion layer is formed by the solid diffusion source, a very high degree of safety is possible.

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詳細情報 詳細情報について

  • CRID
    1570291226874722432
  • NII論文ID
    110000471983
  • NII書誌ID
    AN10120935
  • ISSN
    09162097
  • 本文言語コード
    ja
  • データソース種別
    • CiNii Articles

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