著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
LAUN H. F.,Ultra-thin high quality Ta_2O_5 gate dielectric prepared by in-situ rapid thermal process,"IEDM Tech. Dig., 1998",,,1998,,,,https://cir.nii.ac.jp/crid/1570572700675313792,