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C-10-13 Analysis of 0.1μm-Gate InP-HEMT by Physics-Based Device Simulator Employing Monte Carlo Technique(2)
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- Kaga Rieko
- Department of Applied Electronics, Tokyo University of Science
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- Hatakenaka Masahiro
- Department of Applied Electronics, Tokyo University of Science
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- Hara Kazuhide
- Department of Applied Electronics, Tokyo University of Science
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- I. Fujishiro Hiroki
- Department of Applied Electronics, Tokyo University of Science
Bibliographic Information
- Other Title
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- C-10-13 モンテカルロ物理デバイスシミュレータによる0.1μmゲートInP-HEMTの解析(2)(C-10.電子デバイス,エレクトロニクス2)
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Journal
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- Proceedings of the Society Conference of IEICE
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Proceedings of the Society Conference of IEICE 2005 (2), 67-, 2005-09-07
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1570854176989804416
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- NII Article ID
- 110004744754
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- NII Book ID
- AN10489017
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- Text Lang
- ja
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- Data Source
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- CiNii Articles