{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1571698602390770048.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"NAID","@value":"110003310303"}}],"dc:title":[{"@language":"ja","@value":"PECVD SiOF膜の構造検討"},{"@language":"en","@value":"A study of film structure in PECVD SiOF"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"ja","@value":"フッ素添加シリコン酸化膜(SiOF)の吸湿過程および脱離機構についてFT-IRおよびTDSを用いて検討した。SiOFでは、H_2Oと膜中Si-F結合の間で加水分解反応が起こり、Si-OHとHFを形成することがわかった。またP-SiNキャップを連続形成することで吸湿性を防止して、初期状態における膜構造および誘電率の評価を行った。初期状態ではSiOFにはSi-OHが存在しないこと、Si-F結合にいくつかの種類があることがわかった。また吸湿および加水分解反応のない状態で膜本来の誘電率の測定した結果、フッ素濃度14at%で比誘電率2.8を示した。"},{"@language":"en","@value":"Water absorption and desorption processes in PECVD fluorine- doped silicon oxide(SiOF) were studied using FT-IR and TDS.In SiOF film,Si-OH bonds and hydrofluoric acid were formed by hydrolysis reaction between Si-F bonds and absorbed water.The film natural structure and essential dielectric constant of SiOF films were also studied using P-SiN capped samples in order to get rid of effects of water absorption.It was clarified that Si-OH bonds are not existed in as deposited SiOF film and Si-F bonds has unknown some states.And essential dielectric constant of SiOF film contained 14 at.% fluorine was 2.8.This low dielectric constant was achevied by keeping off water absorption and hydrolysis reaction."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1581698602390770048","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000004967603"}],"foaf:name":[{"@language":"ja","@value":"宇佐見 隆志"},{"@language":"en","@value":"Usami Takashi"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"沖電気工業超LSI研究開発センタ"},{"@language":"en","@value":"VLSI R&D Center,Oki electric Industry Co,Ltd.,"}]},{"@id":"https://cir.nii.ac.jp/crid/1580291610758142337","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000004966676"}],"foaf:name":[{"@language":"ja","@value":"下川 公明"},{"@language":"en","@value":"Shimokawa Kimiaki"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"沖電気工業超LSI研究開発センタ"},{"@language":"en","@value":"VLSI R&D Center,Oki electric Industry Co,Ltd.,"}]},{"@id":"https://cir.nii.ac.jp/crid/1580291610758142336","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000018306374"}],"foaf:name":[{"@language":"ja","@value":"吉丸 正樹"},{"@language":"en","@value":"Yoshimaru Masaki"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"沖電気工業超LSI研究開発センタ"},{"@language":"en","@value":"VLSI R&D Center,Oki electric Industry Co,Ltd."}]}],"publication":{"publicationIdentifier":[{"@type":"NCID","@value":"AN10013254"}],"prism:publicationName":[{"@value":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス"},{"@language":"en","@value":"Technical report of IEICE. SDM"}],"dc:publisher":[{"@value":"一般社団法人電子情報通信学会"},{"@language":"en","@value":"The Institute of Electronics, Information and Communication Engineers"}],"prism:publicationDate":"1994-11-25","prism:volume":"94","prism:number":"367","prism:startingPage":"43","prism:endingPage":"48"},"foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%95%E3%83%83%E7%B4%A0%E6%B7%BB%E5%8A%A0%E3%82%B7%E3%83%AA%E3%82%B3%E3%83%B3%E9%85%B8%E5%8C%96%E8%86%9C","dc:title":"フッ素添加シリコン酸化膜"},{"@id":"https://cir.nii.ac.jp/all?q=%E5%90%B8%E6%B9%BF%E6%80%A7","dc:title":"吸湿性"},{"@id":"https://cir.nii.ac.jp/all?q=%E8%86%9C%E6%A7%8B%E9%80%A0","dc:title":"膜構造"},{"@id":"https://cir.nii.ac.jp/all?q=%E4%BD%8E%E8%AA%98%E9%9B%BB%E7%8E%87","dc:title":"低誘電率"},{"@id":"https://cir.nii.ac.jp/all?q=fluorine-doped%20silicon%20oxide","dc:title":"fluorine-doped silicon oxide"},{"@id":"https://cir.nii.ac.jp/all?q=water%20absorption","dc:title":"water absorption"},{"@id":"https://cir.nii.ac.jp/all?q=film%20structure","dc:title":"film structure"},{"@id":"https://cir.nii.ac.jp/all?q=low%20dielectric%20constant","dc:title":"low dielectric constant"}],"dataSourceIdentifier":[{"@type":"CIA","@value":"110003310303"}]}