AES Study of the Reaction between a Thin Fe-Film and β-SiC (100) Surface

  • Mizokawa Yusuke
    College of Integrated Arts and Sciences, University of Osaka Prefecture
  • Nakanishi Shigemitsu
    College of Integrated Arts and Sciences, University of Osaka Prefecture
  • Miyase Sunao
    College of Integrated Arts and Sciences, University of Osaka Prefecture

Description

The solid state reaction between thin Fe-films and β-SiC (100) in UHV has been studied using AES. Even at room temperature, the reaction between the thin Fe-film and SiC occurred and formed Fe-silicide and graphite with a minor product of Fe-carbide (Fe3C). The reaction proceeded with an increase of Fe-coverage to some extent. With annealing of 15 Å-Fe-film/SiC below 540°C, the Fe-silicide formation was accelerated, but because the amount of available Fe was small, the dissolved carbon atoms were forced to form not the Fe-carbide but the graphite phase. Above 640°C, the Fe-silicide started to decompose and the carbon atoms diffused to the surface and formed surface graphite layers. With annealing at 1080°C, the free-Si segregated at the surface and formed Si–Si bonds, as well as the Si–C bonds consuming the surface graphite phase.

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Details 詳細情報について

  • CRID
    1571980078201545984
  • NII Article ID
    130007300165
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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