著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
OUCHI Kiyoshi and MISHIMA Tomoyoshi and MOCHIZUKI Kazuhiro and OKA Tohru and TANOUE Tomonori,Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors,Extended abstracts of the ... Conference on Solid State Devices and Materials,,,1996-08-26,1996,,577-579,https://cir.nii.ac.jp/crid/1572261550125603712,