著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
KIM J. Y.,The breakthrough in data retention time of DRAM using recess-channel-array transistor (RCAT) for 88nm feature size and beyond,"VLSI Symp. Tech. Dig., 2003",,,2003,,,11-12,https://cir.nii.ac.jp/crid/1572261550940359936,