Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
VON KANEL H.,Very high hole mobilities in modulation doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition,Appl. Phys. Lett.,,,2002,80,,2922-2924,https://cir.nii.ac.jp/crid/1572543024834047104,