Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
FUJISAWA Toshimasa and TARUCHA Seigo,Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry,Extended abstracts of the ... Conference on Solid State Devices and Materials,,,1995-08-21,1995,,198-200,https://cir.nii.ac.jp/crid/1572543025101694080,