著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
SUGAHARA Tomoya and SAKAI Shiro,Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates,IEICE transactions on electronics,09168524,一般社団法人電子情報通信学会,2000-04-25,83,4,598-604,https://cir.nii.ac.jp/crid/1572543027349091968,