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Growth Mechanism of 3C-SiC(111) Films on Si Using Tetramethylsilane by Rapid Thermal Chemical Vapor Deposition
Journal
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- J. Vac. Sci. & Tech. A
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J. Vac. Sci. & Tech. A 15 (4), 2226-2233, 1997
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Details 詳細情報について
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- CRID
- 1572824500669564544
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- NII Article ID
- 80009779357
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- Data Source
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- CiNii Articles
