著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
MATSUSHITA D.,Dramatic Improvement of Vfb shift and Gmmax with ultra-thin and ultra-low-leakage SiN-based SiON gate dielectrics,"Proceedings of IEDM Tech. Digest, 2005",,,2005,,,,https://cir.nii.ac.jp/crid/1573387450195402752,