{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1573387452170068096.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"NAID","@value":"110003206872"}}],"dc:title":[{"@language":"ja","@value":"In/BRBO/STO(Nb)トランジスタの静特性のベース膜厚依存性(I)"},{"@language":"en","@value":"Dependence of base thickness of electrical properties for In/BRBO/ STO(Nb)transistor(I)"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"ja","@value":"我々は、In, (Ba,Rb)BiO_3/SrTiO_3(Nbドープ)トランジスタを作製し、その電気特性のベース膜厚依存性を調べた。(Ba,Rb)BiO_3薄膜は、0.1wt%NbをドープしたSrTiO_3基板上に濃縮オゾンを用いた分子線エピタキシ法で、基板温度370℃で作製した。その膜厚は成膜時間を変えることにより制御した。ベース接地の出力特性から求めた伝達係数(α)はベース膜厚に依存した。伝達係数から見積った特性長は温度に依存しないことから、ベース膜中のキャリアの散乱は不純物散乱と考えられる。"},{"@language":"en","@value":"The In, (Ba,Rb)BiO_3/SrTiO_3(Nb-doped)transistor was fabricated and dependence of base thickness of electrical properties was investigated.The(Ba,Rb)BiO_3 thin films was grown on Nb-soped SrTiO_3(110)substrate by molecular beam epitaxy using distilled ozone at substrate tmeperature of 〜370℃.Thickness of base films w as controlled by deposition time.Output characteristics for the In(Ba,Rb)BiO_3/SrTiO_3(Nb)transistor in common-base configuration were measured and transport coefficience(α)from output characteris tics depended on base thickness.Characteristic length of transport coefficience was independent of temperature.Therefore carrier in base film was scattering by the impurity."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1581135652383326852","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000004763202"}],"foaf:name":[{"@language":"ja","@value":"戸田 典彦"},{"@language":"en","@value":"Toda Fumihiko"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"沖電気工業"},{"@language":"en","@value":"Oki Electric Industry Co.,Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1580854177446000770","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000004741382"}],"foaf:name":[{"@language":"ja","@value":"槙田 毅彦"},{"@language":"en","@value":"Makita Takehiko"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"沖電気工業"},{"@language":"en","@value":"Oki Electric Industry Co.,Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1410001206124700672","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000004763148"}],"foaf:name":[{"@language":"ja","@value":"阿部 仁志"},{"@language":"en","@value":"Abe Hitoshi"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"沖電気工業"},{"@language":"en","@value":"Oki Electric Industry Co.,Ltd."}]}],"publication":{"publicationIdentifier":[{"@type":"NCID","@value":"AN10012885"}],"prism:publicationName":[{"@value":"電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス"},{"@language":"en","@value":"Technical report of IEICE. SCE"}],"dc:publisher":[{"@value":"一般社団法人電子情報通信学会"},{"@language":"en","@value":"The Institute of Electronics, Information and Communication Engineers"}],"prism:publicationDate":"1994-02-16","prism:volume":"93","prism:number":"461","prism:startingPage":"61","prism:endingPage":"66"},"foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=In","dc:title":"In"},{"@id":"https://cir.nii.ac.jp/all?q=(Ba,Rb)BiO_3","dc:title":"(Ba,Rb)BiO_3"},{"@id":"https://cir.nii.ac.jp/all?q=SrTiO_3(Nb)%E3%83%88%E3%83%A9%E3%83%B3%E3%82%B8%E3%82%B9%E3%82%BF","dc:title":"SrTiO_3(Nb)トランジスタ"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%99%E3%83%BC%E3%82%B9%E8%86%9C%E5%8E%9A","dc:title":"ベース膜厚"},{"@id":"https://cir.nii.ac.jp/all?q=%E4%BC%9D%E9%81%94%E4%BF%82%E6%95%B0","dc:title":"伝達係数"},{"@id":"https://cir.nii.ac.jp/all?q=In","dc:title":"In"},{"@id":"https://cir.nii.ac.jp/all?q=Ba,Rb)BiO_3","dc:title":"Ba,Rb)BiO_3"},{"@id":"https://cir.nii.ac.jp/all?q=rTiO_3(Nb)transistor","dc:title":"rTiO_3(Nb)transistor"},{"@id":"https://cir.nii.ac.jp/all?q=Base%20thickness","dc:title":"Base thickness"},{"@id":"https://cir.nii.ac.jp/all?q=Transport%20coefficience","dc:title":"Transport coefficience"}],"dataSourceIdentifier":[{"@type":"CIA","@value":"110003206872"}]}