Interfacial Microstructure of Solid State Diffusion Bonded Silicon Nitride using Niobium Foils(Materials, Metallurgy & Weldability, INTERNATIONAL SYMPOSIUM OF JWRI 30TH ANNIVERSARY)
-
- MAEDA Masakatsu
- Osaka University
-
- SHIBAYANAGI Toshiya
- Osaka University
-
- BABA Daisuke
- Osaka University
-
- NAKA Masaaki
- Osaka University
Search this article
Abstract
The present work aims to bond silicon nitride using niobium foils by solid state diffusion bonding, to clarify the reaction behavior at the joint interface. Bonding temperature and time ranged from 1573 to 1773K and 3.6 to 32.4ks, respectively. The resultant interfacial structure was analyzed by SEM, EPMA and XRD. The phase sequence at the interface appears as Si_3N_4/Nb_5Si_3/Nb_2N+Nb/Nb in the case that commercial Nb foils are used. On the other hand, when fine grained films are used, Nb_2N is formed as a layer adjacent to Nb_5Si_3.
Journal
-
- Transactions of JWRI
-
Transactions of JWRI 32 (1), 131-132, 2003-07
Osaka University
