High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors

  • AO Jin-Ping
    Satellite Venture Business Laboratory, The University of Tokushima
  • KIKUTA Daigo
    Department of Electrical and Electronic Engineering, The University of Tokushima
  • KUBOTA Naotaka
    Department of Electrical and Electronic Engineering, The University of Tokushima
  • NAOI Yoshiki
    Department of Electrical and Electronic Engineering, The University of Tokushima
  • OHNO Yasuo
    Department of Electrical and Electronic Engineering, The University of Tokushima

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抄録

High-temperature stability of copper (Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. Samples were annealed at various temperatures to monitor the changes on device performances. Current-voltage performance such as drain-source current, transconductance, threshold voltage and gate leakage current has no obvious degradation up to annealing temperature of 500℃ and time of 5 minutes. Also up to this temperature, no copper diffusion was found at the Cu and AlGaN interface by secondary ion mass spectrometry determination. At annealing temperature of 700℃ and time of 5 minutes, device performance was found to have degraded. Gate voltage swing increased and threshold voltage shifted due to Cu diffusion into AlGaN. These results indicate that the Schottky contact and device performance of Cu-gate AlGaN/GaN HEMT is stable up to annealing temperature of 500℃. Cu is a promising candidate as gate metallization for high-performance power AlGaN/GaN HEMTs.

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詳細情報

  • CRID
    1573950402232322944
  • NII論文ID
    110003214506
  • NII書誌ID
    AA10826283
  • ISSN
    09168524
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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