著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Yasuda Naoki and Ueno Shuichi and Taniguchi Kenji and Hamaguchi Chihiro and Yamaguchi Yasuo and Nishimura Tadashi,Analytical Device Model of SOI MOSFETs Including Self-Heating Effect,Japanese Journal of Applied Physics,0021-4922,公益社団法人 応用物理学会,1991,30,12,3677-3684,https://cir.nii.ac.jp/crid/1573950402935321856,