著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
UEDA Naoki and SAITO Yuji and HIRAYAMA Masaki and YAMAUCHI Yoshimitsu and SUGAWA Shigetoshi and OHMI Tadahiro,Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation,Extended abstracts of the ... Conference on Solid State Devices and Materials,,,2001-09-25,2001,,164-165,https://cir.nii.ac.jp/crid/1574231874906455936,