Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
YOSHIDA Isao and KUBO Masaharu and OCHI Shikayuki and OHMURA Yoshito,A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure : A-5: FIELD EFFECT TRANSISTORS (II),Japanese journal of applied physics. Supplement,00214922,The Japan Society of Applied Physics,1976,15,1,179-183,https://cir.nii.ac.jp/crid/1574231877184193152,