Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
T. Hamamoto and T. Wada and S. Ito and A. Hideaki and R. Katsumata and Masaki Kondo and Nobutoshi Aoki,A FinFET design based on three-dimensional process and device simulations,"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.",,IEEE,2003-01-01,,,179-182,https://cir.nii.ac.jp/crid/1870302168305411456,https://doi.org/10.1109/sispad.2003.1233666