著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Lei Li and Akio Wakejima,Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics,IEEE Transactions on Electron Devices,0018-9383,Institute of Electrical and Electronics Engineers (IEEE),2021-11-01,68,,5535-5540,https://cir.nii.ac.jp/crid/1870865117957990144,https://doi.org/10.1109/ted.2021.3108759