Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Tatsuya Makino and Yoda Takatoshi and Dobashi Kazufumi and Kishida Satoru and Kentaro Kinoshita,Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area With Secondary Electron Image,MRS Proceedings,0272-9172,Springer Science and Business Media LLC,2010-01-01,1250,,,https://cir.nii.ac.jp/crid/1871146593165188864,https://doi.org/10.1557/proc-1250-g12-03