Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Hidemi Ishiuchi and Y. Takeuchi and M. Ishikawa and T. Mochizuki and T. Tanaka and O. Ozawa,Characterization of MoSi<inf>2</inf>-gate buried channel MOSFET's for a 256K-bit dynamic RAM,1981 International Electron Devices Meeting,,IRE,1981-01-01,,,659-662,https://cir.nii.ac.jp/crid/1871991017555202048,https://doi.org/10.1109/iedm.1981.190173