著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Susumu Horita and Tran Dang Khoa,A new working principle of ferroelectric gate FET memory with an additional electrode,2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595),,IEEE,2003-06-25,2,,513-516,https://cir.nii.ac.jp/crid/1871991017628118912,https://doi.org/10.1109/miel.2002.1003309