著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
K. Kawamura and K. Kajiyama and Isao Hamaguchi and Masaharu Tachimori and S. Masui and Tatsuo Nakajima and Takayuki Yano,Evaluation of fixed oxide charge and oxide-silicon interface trap densities in low-dose and high-dose SIMOX wafers,Proceedings. IEEE International SOI Conference,,IEEE,2002-12-17,,,83-84,https://cir.nii.ac.jp/crid/1872553968010712064,https://doi.org/10.1109/soi.1994.514257