著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
K. Nakayama and Tadashi Sakai and N. Sakuma and H. Ohashi and T. Ono,Si-gate Transfer Mold FEAs for a study of the possibility of high-voltage switching,Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382),,IEEE,2002-11-27,,,144-145,https://cir.nii.ac.jp/crid/1872835442617892224,https://doi.org/10.1109/ivmc.1998.728683