CVD SiGe(C) epitaxial growth and its application to MOS devices
説明
By ultraclean low-pressure CVD using SiH/sub 4/ and GeH/sub 4/ gases, epitaxial growth of Si/Si/sub 1-x/Ge/sub x//Si heterostructures with atomically flat surfaces and interfaces on Si[100] is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH/sub 3/, B/sub 2/H/sub 6/, or SiH/sub 3/CH/sub 3/ addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si/sub 1-x/Ge/sub x/ on the source/drain regions.
収録刊行物
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- 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)
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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) 1 525-530, 2002-11-13
IEEE
