Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Tomoaki Hatayama and Takashi Fuyuki and Hiroyuki Matsunami and Shun-ichi Nakamura and Tsunenobu Kimoto,Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy,Materials Science Forum,1662-9752,"Trans Tech Publications, Ltd.",2000-05-10,338-342,,201-204,https://cir.nii.ac.jp/crid/1873116917369942144,https://doi.org/10.4028/www.scientific.net/msf.338-342.201