Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Rie Togashi and Hisashi Murakami and Hikari Suzuki and Akinori Koukitu and Yoshinao Kumagai,<i>Ab initio</i> calculation for an initial growth process of GaN on (0001) and (000$ \bar 1 $) surfaces by vapor phase epitaxy,physica status solidi c,1862-6351,Wiley,2009-05-26,6,,,https://cir.nii.ac.jp/crid/1873116917377840640,https://doi.org/10.1002/pssc.200880805