著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
S. Nakajima and N. Fujita and Keiichiro Yamamoto and Takashi Sugino,Effect of phosphine plasma treatment on protection from Si passivation in AlInAs/InGaAs HEMT due to F atoms,Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198),,IEEE,2002-11-13,,,248-251,https://cir.nii.ac.jp/crid/1873116918033520896,https://doi.org/10.1109/iciprm.2001.929104