Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Hiroshi Abe and Toshio Hirao and Takashi Tamura and Eiichi Mizuta and Satoshi Kuboyama and N. Ikeda,Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs,IEEE Transactions on Nuclear Science,0018-9499,Institute of Electrical and Electronics Engineers (IEEE),2011-09-01,59,,749-754,https://cir.nii.ac.jp/crid/1873398392264752768,https://doi.org/10.1109/tns.2012.2201501