Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Kazuya Ohuchi and Ichiro Mizushima and Y. Tsunashima and Kiyotaka Miyano and Yoshiaki Toyoshima and Akira Hokazono,Source/drain engineering for sub-100 nm CMOS using selective epitaxial growth technique,International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138),,IEEE,2002-11-11,,,243-246,https://cir.nii.ac.jp/crid/1873398392375640192,https://doi.org/10.1109/iedm.2000.904302