著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
M. Ono and Y. Kamata and A. Nishiyama,Influences of elevated extension structure on the performance of MISFETs with high-K gate dielectrics,Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537),,Japan Soc. Appl. Phys,2002-11-13,,,206-209,https://cir.nii.ac.jp/crid/1873398393041799296,https://doi.org/10.1109/iwgi.2001.967584