著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
K. Yamashita and K. Tatsumma and M. Funada and S. Odanaka and Toshihiro Matsuda and Takashi Ohzone and N. Koike,A new test structure to measure precise location of hot-carrier-induced photoemission peak from gate center of subquarter-micron n-MOSFETs,ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153),,IEEE,2002-11-13,,,223-228,https://cir.nii.ac.jp/crid/1873679867566856448,https://doi.org/10.1109/icmts.2001.928666