{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1873961342781960064.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.7567/ssdm.2010.h-3-5"}}],"dc:title":[{"@value":"Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1893961342781960067","@type":"Researcher","foaf:name":[{"@value":"Shinjiro Hara"}]},{"@id":"https://cir.nii.ac.jp/crid/1893961342781960065","@type":"Researcher","foaf:name":[{"@value":"Takashi Fukui"}]},{"@id":"https://cir.nii.ac.jp/crid/1893961342781960066","@type":"Researcher","foaf:name":[{"@value":"Taketomo Sato"}]},{"@id":"https://cir.nii.ac.jp/crid/1893961342781960064","@type":"Researcher","foaf:name":[{"@value":"Kenji Hiruma"}]},{"@id":"https://cir.nii.ac.jp/crid/1893961342781960068","@type":"Researcher","foaf:name":[{"@value":"S. Fujisawa"}]},{"@id":"https://cir.nii.ac.jp/crid/1893961342781960069","@type":"Researcher","foaf:name":[{"@value":"Junichi Motohisa"}]}],"publication":{"prism:publicationName":[{"@value":"Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials"}],"dc:publisher":[{"@value":"The Japan Society of Applied Physics"}],"prism:publicationDate":"2010-09-23"},"dataSourceIdentifier":[{"@type":"OPENAIRE","@value":"doi_dedup___::b8059acb695d53d08e08ce257bcb0c59"}]}