著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
E.Morifuji and T.Ohguro and T.Yoshitomi and H.Kimijima and T.Morimoto and H.S.Momose and Y.Katsumata and H.Iwai,Process induced damage on RFCMOS,International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217),,IEEE,2002-11-28,,,965-968,https://cir.nii.ac.jp/crid/1874242817218574976,https://doi.org/10.1109/iedm.1998.746515