Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Seiichi Miyazaki and Katsunori Makihara and Noriyuki Taoka and Tokio Takahashi and Mitsuhisa Ikeda and Hisashi Yamada and Akio Ohta and Mitsuaki Shimizu and Nguyen Xuan Truyen,Carrier conduction in SiO<inf>2</inf>/GaN structure with abrupt interface,"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)",,IEEE,2018-04-01,,,1-2,https://cir.nii.ac.jp/crid/1874242817786827136,https://doi.org/10.1109/vlsi-tsa.2018.8403831